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To all our customers
Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp.
The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices and power devices.
Renesas Technology Corp. Customer Support Dept. April 1, 2003
MITSUBISHI Nch POWER MOSFET MITSUBISHI Nch POWER MOSFET
FS10UMA-5A FS10UMA-5A
HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE
FS10UMA-5A
OUTLINE DRAWING
10.5MAX.
Dimensions in mm
4.5
3.2 7.0
1.3
16
3.6
3.8MAX.
1.0
12.5MIN.
0.8
2.54
2.54
4.5MAX.
0.5
2.6
GATE DRAIN SOURCE DRAIN
G 10V DRIVE G VDSS ............................................................................... 250V G rDS (ON) (MAX) .............................................................. 0.52 G ID ......................................................................................... 10A
TO-220
APPLICATION CRT Display monitor, SMPS, etc.
MAXIMUM RATINGS
Symbol VDSS VGSS ID IDM IDA PD Tch Tstg --
(Tc = 25C)
Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Weight VGS = 0V VDS = 0V
Conditions
Ratings 250 20 10 30 10 65 -55 ~ +150 -55 ~ +150 2.0
Unit V V A A A W C C g Sep. 2001
L = 200H
Typical value
MITSUBISHI Nch POWER MOSFET
FS10UMA-5A
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS (Tch = 25C)
Symbol V (BR) DSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) Parameter Drain-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Test conditions ID = 1mA, VGS = 0V VGS = 20V, VDS = 0V VDS = 250V, VGS = 0V ID = 1mA, VDS = 10V ID = 5A, VGS = 10V ID = 5A, VGS = 10V ID = 5A, VDS = 10V VDS = 25V, VGS = 0V, f = 1MHz Limits Min. 250 -- -- 2.0 -- -- -- -- -- -- -- -- -- -- -- -- Typ. -- -- -- 3.0 0.40 2.00 9.0 950 90 25 20 25 150 40 1.5 -- Max. -- 0.1 1 4.0 0.52 2.60 -- -- -- -- -- -- -- -- 2.0 1.92 Unit V A mA V V S pF pF pF ns ns ns ns V C/W
VDD = 150V, ID = 5A, VGS = 10V, RGEN = RGS = 50
IS = 5A, VGS = 0V Channel to case
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE 100
POWER DISSIPATION PD (W) DRAIN CURRENT ID (A)
MAXIMUM SAFE OPERATING AREA
7 5 3 2
80
101
7 5 3 2
tw = 10s 100s 1ms TC = 25C Single Pulse DC
60
40
100
7 5 3 2
20
0
10-1
0
50
100
150
200
7
2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 2
CASE TEMPERATURE TC (C)
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS (TYPICAL) 20
VGS = 20V,10V,7V,6V
OUTPUT CHARACTERISTICS (TYPICAL) 10
DRAIN CURRENT ID (A)
16
TC = 25C Pulse Test
DRAIN CURRENT ID (A)
8
VGS = 20V,10V,7V,6V,5V PD = 65W
12
5V
6
8
PD = 65W 4V
4
4.5V TC = 25C Pulse Test
4
2
4V
0
0
4
8
12
16
20
0
0
2
4
6
8
10
DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN-SOURCE VOLTAGE VDS (V)
Sep. 2001
MITSUBISHI Nch POWER MOSFET
FS10UMA-5A
HIGH-SPEED SWITCHING USE
ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 20 1.0
TC = 25C Pulse Test
ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL)
TC = 25C Pulse Test
DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V)
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) ()
16
0.8
12
ID = 20A
0.6
VGS = 10V
8
0.4
= 20V
4
10A 5A
0.2 0 10-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 DRAIN CURRENT ID (A)
0
0
4
8
12
16
20
GATE-SOURCE VOLTAGE VGS (V)
TRANSFER CHARACTERISTICS (TYPICAL) 20
3 2
FORWARD TRANSFER ADMITTANCE VS. DRAIN CURRENT (TYPICAL)
DRAIN CURRENT ID (A)
FORWARD TRANSFER ADMITTANCE yfs (S)
16
101
7 5 3 2 TC = 25C,75C,125C
12
8
100
7 5 3 2
4
0
TC = 25C VDS = 10V Pulse Test
0
4
8
12
16
20
10-1
VDS = 10V Pulse Test 7 100 2 3 5 7 101 2 3 57
GATE-SOURCE VOLTAGE VGS (V)
DRAIN CURRENT ID (A)
CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL)
5 3 2 5 3 Ciss
SWITCHING CHARACTERISTICS (TYPICAL)
Tch = 25C VGS = 10V VDD = 150V RGEN = RGS = 50 td(off) tf tr 3 2 td(on)
103 7 5 3 2 102 7 5 3 Tch = 25C 2 VGS = 0V f = 1MHz 101 2 3 5 7 100 2 3
SWITCHING TIME (ns)
2
CAPACITANCE Ciss, Coss, Crss (pF)
102
7 5
Coss
Crss 5 7 101 2 3 5 7 102 2
101 7 5
7 100
2
3
5 7 101
2
3
57
DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN CURRENT ID (A)
Sep. 2001
MITSUBISHI Nch POWER MOSFET
FS10UMA-5A
HIGH-SPEED SWITCHING USE
GATE-SOURCE VOLTAGE VS. GATE CHARGE (TYPICAL) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) 40
TC = 25C
GATE-SOURCE VOLTAGE VGS (V)
20
16
VDS = 50V 100V 150V
SOURCE CURRENT IS (A)
32
75C 125C
12
24
8
16
VGS = 0V Pulse Test
4
TCh = 25C ID = 10A
8
0
0
20
40
60
80
100
0
0
0.8
1.6
2.4
3.2
4.0
GATE CHARGE Qg (nC)
SOURCE-DRAIN VOLTAGE VSD (V)
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25C)
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (tC)
ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) 101
VGS = 10V 7 ID = 5A 5 Pulse Test 3 2
THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 5.0
VDS = 10V ID = 1mA
GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V)
4.0
3.0
100
7 5 3 2
2.0
1.0
10-1
-50
0
50
100
150
0
-50
0
50
100
150
CHANNEL TEMPERATURE Tch (C)
CHANNEL TEMPERATURE Tch (C)
DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25C)
TRANSIENT THERMAL IMPEDANCE Zth (ch -c) (C/W)
DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (tC)
BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4
VGS = 0V ID = 1mA
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 101
7 5 3 2 D = 1.0 = 0.5 = 0.2 = 0.1 = 0.05 = 0.02 = 0.01 PDM
tw T D= tw T
1.2
100
7 5 3 2
1.0
0.8
10-1
7 5 3 2
Single Pulse
0.6
0.4
-50
0
50
100
150
10-2 -4 10 2 3 5 710-3 2 3 5 710-2 2 3 5 710-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 PULSE WIDTH tw (s)
CHANNEL TEMPERATURE Tch (C)
Sep. 2001

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